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IPW80R360P7XKSA1

IPW80R360P7XKSA1

For Reference Only

Part Number IPW80R360P7XKSA1
PNEDA Part # IPW80R360P7XKSA1
Description MOSFET N-CH 800V 13A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW80R360P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW80R360P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPW80R360P7XKSA1, IPW80R360P7XKSA1 Datasheet (Total Pages: 13, Size: 950.11 KB)
PDFIPW80R360P7XKSA1 Datasheet Cover
IPW80R360P7XKSA1 Datasheet Page 2 IPW80R360P7XKSA1 Datasheet Page 3 IPW80R360P7XKSA1 Datasheet Page 4 IPW80R360P7XKSA1 Datasheet Page 5 IPW80R360P7XKSA1 Datasheet Page 6 IPW80R360P7XKSA1 Datasheet Page 7 IPW80R360P7XKSA1 Datasheet Page 8 IPW80R360P7XKSA1 Datasheet Page 9 IPW80R360P7XKSA1 Datasheet Page 10 IPW80R360P7XKSA1 Datasheet Page 11

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IPW80R360P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds930pF @ 500V
FET Feature-
Power Dissipation (Max)84W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3

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