IKW50N65EH5XKSA1
For Reference Only
| Part Number | IKW50N65EH5XKSA1 |
| PNEDA Part # | IKW50N65EH5XKSA1 |
| Description | IGBT TRENCH 650V 80A TO247-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,160 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKW50N65EH5XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKW50N65EH5XKSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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IKW50N65EH5XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop™ |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | 275W |
| Switching Energy | 1.5mJ (on), 500µJ (off) |
| Input Type | Standard |
| Gate Charge | 120nC |
| Td (on/off) @ 25°C | 25ns/172ns |
| Test Condition | 400V, 50A, 12Ohm, 15V |
| Reverse Recovery Time (trr) | 81ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
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Manufacturer IXYS Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A Power - Max 190W Switching Energy 2.1mJ (off) Input Type Standard Gate Charge 72nC Td (on/off) @ 25°C 25ns/150ns Test Condition 960V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 40ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
Manufacturer IXYS Series BIMOSFET™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 3000V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 250A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 32A Power - Max 160W Switching Energy - Input Type Standard Gate Charge 142nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case i4-Pac™-5 (3 Leads) Supplier Device Package ISOPLUS i4-PAC™ |
