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IKW50N65EH5XKSA1

IKW50N65EH5XKSA1

For Reference Only

Part Number IKW50N65EH5XKSA1
PNEDA Part # IKW50N65EH5XKSA1
Description IGBT TRENCH 650V 80A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW50N65EH5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW50N65EH5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW50N65EH5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max275W
Switching Energy1.5mJ (on), 500µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C25ns/172ns
Test Condition400V, 50A, 12Ohm, 15V
Reverse Recovery Time (trr)81ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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