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IKW50N65EH5XKSA1

IKW50N65EH5XKSA1

For Reference Only

Part Number IKW50N65EH5XKSA1
PNEDA Part # IKW50N65EH5XKSA1
Description IGBT TRENCH 650V 80A TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW50N65EH5XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW50N65EH5XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW50N65EH5XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop™
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Power - Max275W
Switching Energy1.5mJ (on), 500µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C25ns/172ns
Test Condition400V, 50A, 12Ohm, 15V
Reverse Recovery Time (trr)81ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

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Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

GenX4™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

630A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 110A

Power - Max

880W

Switching Energy

2.2mJ (on), 1.05mJ (off)

Input Type

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Gate Charge

183nC

Td (on/off) @ 25°C

38ns/156ns

Test Condition

400V, 55A, 2Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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STGWA30H65FB

STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

151mJ (on), 293mJ (off)

Input Type

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Gate Charge

149nC

Td (on/off) @ 25°C

37ns/146ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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IXYS

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

160W

Switching Energy

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Input Type

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Gate Charge

142nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Supplier Device Package

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NGTB40N135IHRWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1350V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

394W

Switching Energy

1.3mJ (off)

Input Type

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Gate Charge

234nC

Td (on/off) @ 25°C

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Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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