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IXGX100N170

IXGX100N170

For Reference Only

Part Number IXGX100N170
PNEDA Part # IXGX100N170
Description IGBT 1700V 170A 830W PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGX100N170 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGX100N170
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGX100N170, IXGX100N170 Datasheet (Total Pages: 5, Size: 179.51 KB)
PDFIXGN100N170 Datasheet Cover
IXGN100N170 Datasheet Page 2 IXGN100N170 Datasheet Page 3 IXGN100N170 Datasheet Page 4 IXGN100N170 Datasheet Page 5

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IXGX100N170 Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)170A
Current - Collector Pulsed (Icm)600A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 100A
Power - Max830W
Switching Energy-
Input TypeStandard
Gate Charge425nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

400W

Switching Energy

380µJ (off)

Input Type

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Gate Charge

138nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

2.1mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

75ns/315ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

130ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

22A

Current - Collector Pulsed (Icm)

44A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

66W

Switching Energy

190µJ (on), 920µJ (off)

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

26ns/194ns

Test Condition

480V, 12A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

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Manufacturer

Infineon Technologies

Series

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IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

59A

Current - Collector Pulsed (Icm)

72A

Vce(on) (Max) @ Vge, Ic

1.77V @ 15V, 24A

Power - Max

246W

Switching Energy

532µJ (on), 311µJ (off)

Input Type

Standard

Gate Charge

77nC

Td (on/off) @ 25°C

19ns/90ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

102ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262

IRG4BC20FD

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

64A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 9A

Power - Max

60W

Switching Energy

250µJ (on), 640µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

43ns/240ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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