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IKFW60N60EH3XKSA1

IKFW60N60EH3XKSA1

For Reference Only

Part Number IKFW60N60EH3XKSA1
PNEDA Part # IKFW60N60EH3XKSA1
Description INDUSTRY 14
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKFW60N60EH3XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKFW60N60EH3XKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKFW60N60EH3XKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturer

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Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Power - Max

300W

Switching Energy

950µJ (on), 840µJ (off)

Input Type

Standard

Gate Charge

113nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

400V, 36A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

480A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 120A

Power - Max

540W

Switching Energy

-

Input Type

Standard

Gate Charge

225nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Power - Max

250W

Switching Energy

540µJ (on), 800µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

19ns/125ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRG8CH76K10F

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

480nC

Td (on/off) @ 25°C

80ns/210ns

Test Condition

600V, 75A, 1.5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

STGD4M65DF2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

M

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

16A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

68W

Switching Energy

40µJ (on), 136µJ (off)

Input Type

Standard

Gate Charge

15.2nC

Td (on/off) @ 25°C

12ns/86ns

Test Condition

400V, 4A, 47Ohm, 15V

Reverse Recovery Time (trr)

133ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

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