IKD15N60RAATMA1
For Reference Only
| Part Number | IKD15N60RAATMA1 |
| PNEDA Part # | IKD15N60RAATMA1 |
| Description | IGBT 600V 30A 250W TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,724 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IKD15N60RAATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IKD15N60RAATMA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IKD15N60RAATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | TrenchStop® |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 30A |
| Current - Collector Pulsed (Icm) | 45A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Power - Max | 250W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 90nC |
| Td (on/off) @ 25°C | 16ns/183ns |
| Test Condition | 400V, 15A, 15Ohm, 15V |
| Reverse Recovery Time (trr) | 110ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
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Manufacturer Microsemi Corporation Series Thunderbolt IGBT® IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 360A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A Power - Max 500W Switching Energy 3.4mJ Input Type Standard Gate Charge 275nC Td (on/off) @ 25°C 26ns/395ns Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 48A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A Power - Max 125W Switching Energy 460µJ (on), 180µJ (off) Input Type Standard Gate Charge 13.3nC Td (on/off) @ 25°C 16ns/40ns Test Condition 450V, 8A, 30Ohm, 15V Reverse Recovery Time (trr) 114ns Operating Temperature - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 5.3A Current - Collector Pulsed (Icm) 6A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A Power - Max 60W Switching Energy 70µJ (on), 90µJ (off) Input Type Standard Gate Charge 14nC Td (on/off) @ 25°C 15ns/67ns Test Condition 960V, 1A, 82Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252AA |
