Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HUFA76429D3ST

HUFA76429D3ST

For Reference Only

Part Number HUFA76429D3ST
PNEDA Part # HUFA76429D3ST
Description MOSFET N-CH 60V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUFA76429D3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUFA76429D3ST
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUFA76429D3ST, HUFA76429D3ST Datasheet (Total Pages: 10, Size: 294.25 KB)
PDFHUFA76429D3ST Datasheet Cover
HUFA76429D3ST Datasheet Page 2 HUFA76429D3ST Datasheet Page 3 HUFA76429D3ST Datasheet Page 4 HUFA76429D3ST Datasheet Page 5 HUFA76429D3ST Datasheet Page 6 HUFA76429D3ST Datasheet Page 7 HUFA76429D3ST Datasheet Page 8 HUFA76429D3ST Datasheet Page 9 HUFA76429D3ST Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HUFA76429D3ST Datasheet
  • where to find HUFA76429D3ST
  • ON Semiconductor

  • ON Semiconductor HUFA76429D3ST
  • HUFA76429D3ST PDF Datasheet
  • HUFA76429D3ST Stock

  • HUFA76429D3ST Pinout
  • Datasheet HUFA76429D3ST
  • HUFA76429D3ST Supplier

  • ON Semiconductor Distributor
  • HUFA76429D3ST Price
  • HUFA76429D3ST Distributor

HUFA76429D3ST Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1480pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2464pF @ 25V

FET Feature

-

Power Dissipation (Max)

166W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

DMPH4025SFVWQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

8.7A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1918pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

ZVN4206A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

600mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IRFIBF20GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

1.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8Ohm @ 720mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

NVMFS5C430NLWFAFT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

38A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

Recently Sold

1.5SMC15AT3G

1.5SMC15AT3G

Littelfuse

TVS DIODE 12.8V 21.2V SMC

LM2904AQTH-13

LM2904AQTH-13

Diodes Incorporated

IC OPAMP GP 2 CIRCUIT 8TSSOP

8121-RC

8121-RC

Bourns

COMMON MODE CHOKE 1MH 20A 2LN TH

MLX90615SSG-DAG-000-TU

MLX90615SSG-DAG-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO46-4

LQH43CN100K03L

LQH43CN100K03L

Murata

FIXED IND 10UH 650MA 240 MOHM

ILBB0805ER110V

ILBB0805ER110V

Vishay Dale

FERRITE BEAD 11 OHM 0805 1LN

S-8254AAFFT-TB-G

S-8254AAFFT-TB-G

ABLIC

IC LI-ION BATT PROTECT 16-TSSOP

IPA60R360P7SXKSA1

IPA60R360P7SXKSA1

Infineon Technologies

MOSFET N-CHANNEL 600V 9A TO220

SQJ459EP-T1_GE3

SQJ459EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 52A POWERPAKSO-8

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

AD9240AS

AD9240AS

Analog Devices

IC ADC 14BIT PIPELINED 44MQFP

MC14094BDR2G

MC14094BDR2G

ON Semiconductor

IC SHIFT REGSTR 8BIT CMOS 16SOIC