Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVN4206A

ZVN4206A

For Reference Only

Part Number ZVN4206A
PNEDA Part # ZVN4206A
Description MOSFET N-CH 60V 600MA TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 89,592
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVN4206A Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVN4206A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZVN4206A, ZVN4206A Datasheet (Total Pages: 3, Size: 103.3 KB)
PDFZVN4206ASTOB Datasheet Cover
ZVN4206ASTOB Datasheet Page 2 ZVN4206ASTOB Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVN4206A Datasheet
  • where to find ZVN4206A
  • Diodes Incorporated

  • Diodes Incorporated ZVN4206A
  • ZVN4206A PDF Datasheet
  • ZVN4206A Stock

  • ZVN4206A Pinout
  • Datasheet ZVN4206A
  • ZVN4206A Supplier

  • Diodes Incorporated Distributor
  • ZVN4206A Price
  • ZVN4206A Distributor

ZVN4206A Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 25V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

The Products You May Be Interested In

NTMFS4854NST1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SENSEFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

15.2A (Ta), 149A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3.2V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 11.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4830pF @ 12V

FET Feature

-

Power Dissipation (Max)

900mW (Ta), 86.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SO-8FL

Package / Case

8-PowerTDFN

STP4N52K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

525V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

334pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

DMP4025SFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.65A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1643pF @ 20V

FET Feature

-

Power Dissipation (Max)

810mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

GP1M010A060FH

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1891pF @ 25V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

NTR4101PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

85mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

675pF @ 10V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

PI3740-00-LGIZ

PI3740-00-LGIZ

Vicor

DC DC CONVERTER 10-50V

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

ADM3202ARU

ADM3202ARU

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

MBRA210LT3G

MBRA210LT3G

ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB

MAX489EESD+T

MAX489EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

AD8250ARMZ

AD8250ARMZ

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

MPXV7002DP

MPXV7002DP

NXP

PRESSURE SENSOR DUAL PORT 8-SOP

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917