HUFA75617D3ST
For Reference Only
| Part Number | HUFA75617D3ST |
| PNEDA Part # | HUFA75617D3ST |
| Description | MOSFET N-CH 100V 16A DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,658 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HUFA75617D3ST Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | HUFA75617D3ST |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HUFA75617D3ST Datasheet
- where to find HUFA75617D3ST
- ON Semiconductor
- ON Semiconductor HUFA75617D3ST
- HUFA75617D3ST PDF Datasheet
- HUFA75617D3ST Stock
- HUFA75617D3ST Pinout
- Datasheet HUFA75617D3ST
- HUFA75617D3ST Supplier
- ON Semiconductor Distributor
- HUFA75617D3ST Price
- HUFA75617D3ST Distributor
HUFA75617D3ST Specifications
| Manufacturer | ON Semiconductor |
| Series | UltraFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 20V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Toshiba Semiconductor and Storage Series π-MOSVII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.43Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.85mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4065pF @ 50V FET Feature - Power Dissipation (Max) 2.7W (Ta), 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power56 Package / Case 8-PowerTDFN |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 100mA (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 110Ohm @ 50mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 1.1W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
