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HUF75329D3ST

HUF75329D3ST

For Reference Only

Part Number HUF75329D3ST
PNEDA Part # HUF75329D3ST
Description MOSFET N-CH 55V 20A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,016
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75329D3ST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75329D3ST
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75329D3ST, HUF75329D3ST Datasheet (Total Pages: 10, Size: 715.32 KB)
PDFHUF75329D3ST Datasheet Cover
HUF75329D3ST Datasheet Page 2 HUF75329D3ST Datasheet Page 3 HUF75329D3ST Datasheet Page 4 HUF75329D3ST Datasheet Page 5 HUF75329D3ST Datasheet Page 6 HUF75329D3ST Datasheet Page 7 HUF75329D3ST Datasheet Page 8 HUF75329D3ST Datasheet Page 9 HUF75329D3ST Datasheet Page 10

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HUF75329D3ST Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 25V
FET Feature-
Power Dissipation (Max)128W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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