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IXGT30N60B2D1

IXGT30N60B2D1

For Reference Only

Part Number IXGT30N60B2D1
PNEDA Part # IXGT30N60B2D1
Description IGBT 600V 70A 190W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT30N60B2D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT30N60B2D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGT30N60B2D1, IXGT30N60B2D1 Datasheet (Total Pages: 6, Size: 504.01 KB)
PDFIXGT30N60B2D1 Datasheet Cover
IXGT30N60B2D1 Datasheet Page 2 IXGT30N60B2D1 Datasheet Page 3 IXGT30N60B2D1 Datasheet Page 4 IXGT30N60B2D1 Datasheet Page 5 IXGT30N60B2D1 Datasheet Page 6

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IXGT30N60B2D1 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 24A
Power - Max190W
Switching Energy320µJ (off)
Input TypeStandard
Gate Charge66nC
Td (on/off) @ 25°C13ns/110ns
Test Condition400V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr)25ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Infineon Technologies

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

390µJ (on), 330µJ (off)

Input Type

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Td (on/off) @ 25°C

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600V, 6A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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