HGTG10N120BND Datasheet
HGTG10N120BND Datasheet
Total Pages: 10
Size: 230.65 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGTG10N120BND
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 298W Switching Energy 850µJ (on), 800µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 23ns/165ns Test Condition 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) 70ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
