HGT1S2N120CN Datasheet
HGT1S2N120CN Datasheet
Total Pages: 9
Size: 498.55 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGT1S2N120CN
|
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 13A Current - Collector Pulsed (Icm) 20A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2.6A Power - Max 104W Switching Energy 96µJ (on), 355µJ (off) Input Type Standard Gate Charge 30nC Td (on/off) @ 25°C 25ns/205ns Test Condition 960V, 2.6A, 51Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262 |
