HGT1S20N60C3S9A Datasheet
HGT1S20N60C3S9A Datasheet
Total Pages: 10
Size: 262.6 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGT1S20N60C3S9A
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 45A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 20A Power - Max 164W Switching Energy 295µJ (on), 500µJ (off) Input Type Standard Gate Charge 91nC Td (on/off) @ 25°C 28ns/151ns Test Condition 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
