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IXBK64N250

IXBK64N250

For Reference Only

Part Number IXBK64N250
PNEDA Part # IXBK64N250
Description BIMOSFET 2500V 75A MONO TO-247AD
Manufacturer IXYS
Unit Price
1 ---------- $1,655.4299
50 ---------- $1,577.8316
100 ---------- $1,500.2333
200 ---------- $1,422.6351
400 ---------- $1,357.9698
500 ---------- $1,293.3046
In Stock 5,198
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBK64N250 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBK64N250
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBK64N250, IXBK64N250 Datasheet (Total Pages: 6, Size: 192.72 KB)
PDFIXBX64N250 Datasheet Cover
IXBX64N250 Datasheet Page 2 IXBX64N250 Datasheet Page 3 IXBX64N250 Datasheet Page 4 IXBX64N250 Datasheet Page 5 IXBX64N250 Datasheet Page 6

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IXBK64N250 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic3V @ 15V, 64A
Power - Max735W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

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Switching Energy

120µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

10ns/65ns

Test Condition

480V, 7A, 18Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Manufacturer

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Series

HiPerFAST™, Lightspeed™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

54W

Switching Energy

70µJ (on), 120µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

9ns/65ns

Test Condition

480V, 7A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

26ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack, Isolated Tab

Supplier Device Package

TO-220 Isolated Tab

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

56A

Current - Collector Pulsed (Icm)

210A

Vce(on) (Max) @ Vge, Ic

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Power - Max

290W

Switching Energy

3mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

142nC

Td (on/off) @ 25°C

28ns/133ns

Test Condition

600V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

195ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IRGS8B60KTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Power - Max

167W

Switching Energy

160µJ (on), 160µJ (off)

Input Type

Standard

Gate Charge

29nC

Td (on/off) @ 25°C

23ns/140ns

Test Condition

400V, 8A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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