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HAT2299WP-EL-E

HAT2299WP-EL-E

For Reference Only

Part Number HAT2299WP-EL-E
PNEDA Part # HAT2299WP-EL-E
Description MOSFET N-CH WPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,534
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HAT2299WP-EL-E Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberHAT2299WP-EL-E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HAT2299WP-EL-E, HAT2299WP-EL-E Datasheet (Total Pages: 9, Size: 122.24 KB)
PDFHAT2299WP-EL-E Datasheet Cover
HAT2299WP-EL-E Datasheet Page 2 HAT2299WP-EL-E Datasheet Page 3 HAT2299WP-EL-E Datasheet Page 4 HAT2299WP-EL-E Datasheet Page 5 HAT2299WP-EL-E Datasheet Page 6 HAT2299WP-EL-E Datasheet Page 7 HAT2299WP-EL-E Datasheet Page 8 HAT2299WP-EL-E Datasheet Page 9

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HAT2299WP-EL-E Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 7A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 25V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WPAK
Package / Case8-PowerWDFN

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