HAT2299WP-EL-E Datasheet
HAT2299WP-EL-E Datasheet
Total Pages: 9
Size: 122.24 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
HAT2299WP-EL-E
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 14A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 7A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WPAK Package / Case 8-PowerWDFN |
