GT10J312(Q) Datasheet
GT10J312(Q) Datasheet
Total Pages: 7
Size: 509.49 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
GT10J312(Q)
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Manufacturer Toshiba Semiconductor and Storage Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 10A Current - Collector Pulsed (Icm) 20A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 60W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C 400ns/400ns Test Condition 300V, 10A, 100Ohm, 15V Reverse Recovery Time (trr) 200ns Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-220SM |
