Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GB01SLT12-252 Datasheet

GB01SLT12-252 Datasheet
Total Pages: 7
Size: 628.57 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers: GB01SLT12-252
GB01SLT12-252 Datasheet Page 1
GB01SLT12-252 Datasheet Page 2
GB01SLT12-252 Datasheet Page 3
GB01SLT12-252 Datasheet Page 4
GB01SLT12-252 Datasheet Page 5
GB01SLT12-252 Datasheet Page 6
GB01SLT12-252 Datasheet Page 7
GB01SLT12-252

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.8V @ 1A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

2µA @ 1200V

Capacitance @ Vr, F

69pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252

Operating Temperature - Junction

-55°C ~ 175°C