GB01SLT12-252 Datasheet
GB01SLT12-252 Datasheet
Total Pages: 7
Size: 628.57 KB
GeneSiC Semiconductor
This datasheet covers 1 part numbers:
GB01SLT12-252
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 2µA @ 1200V Capacitance @ Vr, F 69pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C |