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SISA26DN-T1-GE3

SISA26DN-T1-GE3

For Reference Only

Part Number SISA26DN-T1-GE3
PNEDA Part # SISA26DN-T1-GE3
Description MOSFET N-CH 25V 60A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 28,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA26DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA26DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA26DN-T1-GE3, SISA26DN-T1-GE3 Datasheet (Total Pages: 9, Size: 261.51 KB)
PDFSISA26DN-T1-GE3 Datasheet Cover
SISA26DN-T1-GE3 Datasheet Page 2 SISA26DN-T1-GE3 Datasheet Page 3 SISA26DN-T1-GE3 Datasheet Page 4 SISA26DN-T1-GE3 Datasheet Page 5 SISA26DN-T1-GE3 Datasheet Page 6 SISA26DN-T1-GE3 Datasheet Page 7 SISA26DN-T1-GE3 Datasheet Page 8 SISA26DN-T1-GE3 Datasheet Page 9

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SISA26DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds2247pF @ 10V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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