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FQP32N12V2

FQP32N12V2

For Reference Only

Part Number FQP32N12V2
PNEDA Part # FQP32N12V2
Description MOSFET N-CH 120V 32A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP32N12V2 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP32N12V2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP32N12V2, FQP32N12V2 Datasheet (Total Pages: 10, Size: 857.88 KB)
PDFFQP32N12V2 Datasheet Cover
FQP32N12V2 Datasheet Page 2 FQP32N12V2 Datasheet Page 3 FQP32N12V2 Datasheet Page 4 FQP32N12V2 Datasheet Page 5 FQP32N12V2 Datasheet Page 6 FQP32N12V2 Datasheet Page 7 FQP32N12V2 Datasheet Page 8 FQP32N12V2 Datasheet Page 9 FQP32N12V2 Datasheet Page 10

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FQP32N12V2 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1860pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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