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SI5475DDC-T1-GE3

SI5475DDC-T1-GE3

For Reference Only

Part Number SI5475DDC-T1-GE3
PNEDA Part # SI5475DDC-T1-GE3
Description MOSFET P-CH 12V 6A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5475DDC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5475DDC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SI5475DDC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs32mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 6V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 5.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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