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FQI16N25CTU

FQI16N25CTU

For Reference Only

Part Number FQI16N25CTU
PNEDA Part # FQI16N25CTU
Description MOSFET N-CH 250V 15.6A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,750
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI16N25CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI16N25CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI16N25CTU, FQI16N25CTU Datasheet (Total Pages: 9, Size: 761.41 KB)
PDFFQI16N25CTU Datasheet Cover
FQI16N25CTU Datasheet Page 2 FQI16N25CTU Datasheet Page 3 FQI16N25CTU Datasheet Page 4 FQI16N25CTU Datasheet Page 5 FQI16N25CTU Datasheet Page 6 FQI16N25CTU Datasheet Page 7 FQI16N25CTU Datasheet Page 8 FQI16N25CTU Datasheet Page 9

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FQI16N25CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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