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FQI12N60CTU

FQI12N60CTU

For Reference Only

Part Number FQI12N60CTU
PNEDA Part # FQI12N60CTU
Description MOSFET N-CH 600V 12A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI12N60CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI12N60CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI12N60CTU, FQI12N60CTU Datasheet (Total Pages: 9, Size: 823.45 KB)
PDFFQI12N60CTU Datasheet Cover
FQI12N60CTU Datasheet Page 2 FQI12N60CTU Datasheet Page 3 FQI12N60CTU Datasheet Page 4 FQI12N60CTU Datasheet Page 5 FQI12N60CTU Datasheet Page 6 FQI12N60CTU Datasheet Page 7 FQI12N60CTU Datasheet Page 8 FQI12N60CTU Datasheet Page 9

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FQI12N60CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2290pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 225W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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