Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQB8P10TM

FQB8P10TM

For Reference Only

Part Number FQB8P10TM
PNEDA Part # FQB8P10TM
Description MOSFET P-CH 100V 8A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,906
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB8P10TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB8P10TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB8P10TM, FQB8P10TM Datasheet (Total Pages: 10, Size: 2,251.1 KB)
PDFFQB8P10TM Datasheet Cover
FQB8P10TM Datasheet Page 2 FQB8P10TM Datasheet Page 3 FQB8P10TM Datasheet Page 4 FQB8P10TM Datasheet Page 5 FQB8P10TM Datasheet Page 6 FQB8P10TM Datasheet Page 7 FQB8P10TM Datasheet Page 8 FQB8P10TM Datasheet Page 9 FQB8P10TM Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQB8P10TM Datasheet
  • where to find FQB8P10TM
  • ON Semiconductor

  • ON Semiconductor FQB8P10TM
  • FQB8P10TM PDF Datasheet
  • FQB8P10TM Stock

  • FQB8P10TM Pinout
  • Datasheet FQB8P10TM
  • FQB8P10TM Supplier

  • ON Semiconductor Distributor
  • FQB8P10TM Price
  • FQB8P10TM Distributor

FQB8P10TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 65W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NVMFS5832NLT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 127W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

STB30NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMT10H015LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPL65R099C7AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id

4V @ 590µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2140pF @ 400V

FET Feature

-

Power Dissipation (Max)

128W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN

TSM018NA03CR RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3479pF @ 15V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

TAJB107M006RNJ

TAJB107M006RNJ

CAP TANT 100UF 20% 6.3V 1411

SM05T1G

SM05T1G

ON Semiconductor

TVS DIODE 5V 9.8V SOT23-3

MAX1111CPE+

MAX1111CPE+

Maxim Integrated

IC ADC 8BIT SAR 16DIP

BZT52C4V3-7

BZT52C4V3-7

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

XC7Z020-1CLG400C

XC7Z020-1CLG400C

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

MBR0580-TP

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

PI3USB30532ZLE

PI3USB30532ZLE

Diodes Incorporated

IC MUX/DEMUX USB 3.0 40TQFN

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

APT8024JLL

APT8024JLL

Microsemi

MOSFET N-CH 800V 29A SOT-227

MCP73832T-2ATI/OT

MCP73832T-2ATI/OT

Microchip Technology

IC LI-ION/LI-POLY CTRLR SOT23-5