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SQJ416EP-T1_GE3

SQJ416EP-T1_GE3

For Reference Only

Part Number SQJ416EP-T1_GE3
PNEDA Part # SQJ416EP-T1_GE3
Description MOSFET N-CH 100V 27A POWERPAKSO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ416EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ416EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJ416EP-T1_GE3, SQJ416EP-T1_GE3 Datasheet (Total Pages: 11, Size: 283.36 KB)
PDFSQJ416EP-T1_GE3 Datasheet Cover
SQJ416EP-T1_GE3 Datasheet Page 2 SQJ416EP-T1_GE3 Datasheet Page 3 SQJ416EP-T1_GE3 Datasheet Page 4 SQJ416EP-T1_GE3 Datasheet Page 5 SQJ416EP-T1_GE3 Datasheet Page 6 SQJ416EP-T1_GE3 Datasheet Page 7 SQJ416EP-T1_GE3 Datasheet Page 8 SQJ416EP-T1_GE3 Datasheet Page 9 SQJ416EP-T1_GE3 Datasheet Page 10 SQJ416EP-T1_GE3 Datasheet Page 11

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SQJ416EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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