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FQB630TM

FQB630TM

For Reference Only

Part Number FQB630TM
PNEDA Part # FQB630TM
Description MOSFET N-CH 200V 9A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB630TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB630TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB630TM, FQB630TM Datasheet (Total Pages: 9, Size: 759.71 KB)
PDFFQB630TM Datasheet Cover
FQB630TM Datasheet Page 2 FQB630TM Datasheet Page 3 FQB630TM Datasheet Page 4 FQB630TM Datasheet Page 5 FQB630TM Datasheet Page 6 FQB630TM Datasheet Page 7 FQB630TM Datasheet Page 8 FQB630TM Datasheet Page 9

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FQB630TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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