Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQD24N08TF

FQD24N08TF

For Reference Only

Part Number FQD24N08TF
PNEDA Part # FQD24N08TF
Description MOSFET N-CH 80V 19.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,196
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD24N08TF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD24N08TF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD24N08TF, FQD24N08TF Datasheet (Total Pages: 9, Size: 724.88 KB)
PDFFQD24N08TM Datasheet Cover
FQD24N08TM Datasheet Page 2 FQD24N08TM Datasheet Page 3 FQD24N08TM Datasheet Page 4 FQD24N08TM Datasheet Page 5 FQD24N08TM Datasheet Page 6 FQD24N08TM Datasheet Page 7 FQD24N08TM Datasheet Page 8 FQD24N08TM Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQD24N08TF Datasheet
  • where to find FQD24N08TF
  • ON Semiconductor

  • ON Semiconductor FQD24N08TF
  • FQD24N08TF PDF Datasheet
  • FQD24N08TF Stock

  • FQD24N08TF Pinout
  • Datasheet FQD24N08TF
  • FQD24N08TF Supplier

  • ON Semiconductor Distributor
  • FQD24N08TF Price
  • FQD24N08TF Distributor

FQD24N08TF Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C19.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRF520NSTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPL60R1K5C6SATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 100V

FET Feature

-

Power Dissipation (Max)

26.6W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Thin-PAK (5x6)

Package / Case

8-PowerTDFN

IRL3303D1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SIR140DP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

71.9A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.67mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

8150pF @ 10V

FET Feature

-

Power Dissipation (Max)

6.25W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

AUIRFR024NTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

75mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

5M2210ZF256I5

5M2210ZF256I5

Intel

IC CPLD 1700MC 7NS 256FBGA

TIP42CTU

TIP42CTU

ON Semiconductor

TRANS PNP 100V 6A TO-220

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

CDSOT23-SM712

CDSOT23-SM712

Bourns

TVS DIODE 7V/12V 14V/26V SOT23-3

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP

NC7SZ00P5X

NC7SZ00P5X

ON Semiconductor

IC GATE NAND 1CH 2-INP SC70-5

PIC16F18323-I/SL

PIC16F18323-I/SL

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14SOIC

LTM8074IY#PBF

LTM8074IY#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 1.2A 25BGA

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

CD4013BCN

CD4013BCN

ON Semiconductor

IC FF D-TYPE DUAL 1BIT 14DIP

WM8962ECSN/R

WM8962ECSN/R

Cirrus Logic Inc.

IC CODEC STER 49WCSP

MMBF170

MMBF170

ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23