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FQB34P10TM-F085P

FQB34P10TM-F085P

For Reference Only

Part Number FQB34P10TM-F085P
PNEDA Part # FQB34P10TM-F085P
Description PMOS D2PAK 100V 60 MOHM
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB34P10TM-F085P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB34P10TM-F085P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB34P10TM-F085P, FQB34P10TM-F085P Datasheet (Total Pages: 7, Size: 748.12 KB)
PDFFQB34P10TM-F085P Datasheet Cover
FQB34P10TM-F085P Datasheet Page 2 FQB34P10TM-F085P Datasheet Page 3 FQB34P10TM-F085P Datasheet Page 4 FQB34P10TM-F085P Datasheet Page 5 FQB34P10TM-F085P Datasheet Page 6 FQB34P10TM-F085P Datasheet Page 7

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FQB34P10TM-F085P Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C33.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 16.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2910pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 155W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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