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FGH50N6S2

FGH50N6S2

For Reference Only

Part Number FGH50N6S2
PNEDA Part # FGH50N6S2
Description IGBT 600V 75A 463W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGH50N6S2 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGH50N6S2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGH50N6S2, FGH50N6S2 Datasheet (Total Pages: 8, Size: 173.97 KB)
PDFFGH50N6S2 Datasheet Cover
FGH50N6S2 Datasheet Page 2 FGH50N6S2 Datasheet Page 3 FGH50N6S2 Datasheet Page 4 FGH50N6S2 Datasheet Page 5 FGH50N6S2 Datasheet Page 6 FGH50N6S2 Datasheet Page 7 FGH50N6S2 Datasheet Page 8

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FGH50N6S2 Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Power - Max463W
Switching Energy260µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge70nC
Td (on/off) @ 25°C13ns/55ns
Test Condition390V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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FGH40N60SFTU

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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SGS5N150UFTU

ON Semiconductor

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

50W

Switching Energy

190µJ (on), 100µJ (off)

Input Type

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Gate Charge

30nC

Td (on/off) @ 25°C

10ns/30ns

Test Condition

600V, 5A, 10Ohm, 10V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

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RJH65T04BDPMA0#T2F

Renesas Electronics America

Manufacturer

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Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

360µJ (on), 350µJ (off)

Input Type

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Gate Charge

74nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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