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FGH40N60SFTU

FGH40N60SFTU

For Reference Only

Part Number FGH40N60SFTU
PNEDA Part # FGH40N60SFTU
Description IGBT 600V 80A 290W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 10,848
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGH40N60SFTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGH40N60SFTU
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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FGH40N60SFTU Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 40A
Power - Max290W
Switching Energy1.13mJ (on), 310µJ (off)
Input TypeStandard
Gate Charge120nC
Td (on/off) @ 25°C25ns/115ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

PowerMESH™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

220µJ (on), 215µJ (off)

Input Type

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Gate Charge

160nC

Td (on/off) @ 25°C

26ns/110ns

Test Condition

390V, 22A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

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Power - Max

220W

Switching Energy

2.4mJ (on), 4.3mJ (off)

Input Type

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Gate Charge

105nC

Td (on/off) @ 25°C

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Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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