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FGH40T65UPD

FGH40T65UPD

For Reference Only

Part Number FGH40T65UPD
PNEDA Part # FGH40T65UPD
Description IGBT 650V 80A 268W TO-247AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 23,238
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGH40T65UPD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGH40T65UPD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGH40T65UPD, FGH40T65UPD Datasheet (Total Pages: 11, Size: 904.09 KB)
PDFFGH40T65UPD Datasheet Cover
FGH40T65UPD Datasheet Page 2 FGH40T65UPD Datasheet Page 3 FGH40T65UPD Datasheet Page 4 FGH40T65UPD Datasheet Page 5 FGH40T65UPD Datasheet Page 6 FGH40T65UPD Datasheet Page 7 FGH40T65UPD Datasheet Page 8 FGH40T65UPD Datasheet Page 9 FGH40T65UPD Datasheet Page 10 FGH40T65UPD Datasheet Page 11

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FGH40T65UPD Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 40A
Power - Max268W
Switching Energy1.59mJ (on), 580µJ (off)
Input TypeStandard
Gate Charge177nC
Td (on/off) @ 25°C20ns/144ns
Test Condition400V, 40A, 7Ohm, 15V
Reverse Recovery Time (trr)43ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 35A

Power - Max

250W

Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Power - Max

250W

Switching Energy

550µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 24A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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NGTB15N120LWG

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

143nC

Td (on/off) @ 25°C

30ns/120ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

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IRGC4061B

Infineon Technologies

Manufacturer

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Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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