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IXGP50N60C4

IXGP50N60C4

For Reference Only

Part Number IXGP50N60C4
PNEDA Part # IXGP50N60C4
Description IGBT 600V 90A 300W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,956
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGP50N60C4 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGP50N60C4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGP50N60C4, IXGP50N60C4 Datasheet (Total Pages: 6, Size: 218.35 KB)
PDFIXGP50N60C4 Datasheet Cover
IXGP50N60C4 Datasheet Page 2 IXGP50N60C4 Datasheet Page 3 IXGP50N60C4 Datasheet Page 4 IXGP50N60C4 Datasheet Page 5 IXGP50N60C4 Datasheet Page 6

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IXGP50N60C4 Specifications

ManufacturerIXYS
Series-
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)90A
Current - Collector Pulsed (Icm)220A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 36A
Power - Max300W
Switching Energy950µJ (on), 840µJ (off)
Input TypeStandard
Gate Charge113nC
Td (on/off) @ 25°C40ns/270ns
Test Condition400V, 36A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Mounting Type

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

38W

Switching Energy

140µJ (on), 2.58mJ (off)

Input Type

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Gate Charge

15nC

Td (on/off) @ 25°C

25ns/630ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

190A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

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Switching Energy

456µJ (on), 635µJ (off)

Input Type

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Gate Charge

165nC

Td (on/off) @ 25°C

19ns/85ns

Test Condition

400V, 50A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

RJP60D0DPE-00#J3

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 22A

Power - Max

122W

Switching Energy

-

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

35ns/90ns

Test Condition

300V, 22A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-83

Supplier Device Package

4-LDPAK

STGFL6NC60DI

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

7A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 3A

Power - Max

22W

Switching Energy

32µJ (on), 24µJ (off)

Input Type

Standard

Gate Charge

12nC

Td (on/off) @ 25°C

6.7ns/46ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

23ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FP

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