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IXBA16N170AHV

IXBA16N170AHV

For Reference Only

Part Number IXBA16N170AHV
PNEDA Part # IXBA16N170AHV
Description REVERSE CONDUCTING IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,948
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBA16N170AHV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBA16N170AHV
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXBA16N170AHV Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)16A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic6V @ 15V, 10A
Power - Max150W
Switching Energy2.5mJ (off)
Input TypeStandard
Gate Charge65nC
Td (on/off) @ 25°C15ns/250ns
Test Condition1360V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)25ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263HV

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

400V, 50A, 2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 70A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

30ns/120ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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IRGP4620D-EPBF

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

75µJ (on), 225µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

32A

Current - Collector Pulsed (Icm)

36A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Power - Max

140W

Switching Energy

185µJ (on), 355µJ (off)

Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220 Full Pack

RJH1CF6RDPQ-80#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

Power - Max

227.2W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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