FGA40T65SHDF
For Reference Only
| Part Number | FGA40T65SHDF |
| PNEDA Part # | FGA40T65SHDF |
| Description | IGBT 650V 80A 268W TO-3PN |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,420 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FGA40T65SHDF Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FGA40T65SHDF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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FGA40T65SHDF Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 1.81V @ 15V, 40A |
| Power - Max | 268W |
| Switching Energy | 1.22mJ (on), 440µJ (off) |
| Input Type | Standard |
| Gate Charge | 68nC |
| Td (on/off) @ 25°C | 18ns/64ns |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Reverse Recovery Time (trr) | 101ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
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Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 134A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A Power - Max 595W Switching Energy - Input Type Standard Gate Charge 305nC Td (on/off) @ 25°C 18ns/170ns Test Condition 433V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package T-MAX™ [B2] |
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