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IXGH32N60B

IXGH32N60B

For Reference Only

Part Number IXGH32N60B
PNEDA Part # IXGH32N60B
Description IGBT 600V 60A 200W TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH32N60B Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH32N60B
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH32N60B, IXGH32N60B Datasheet (Total Pages: 2, Size: 35.55 KB)
PDFIXGH32N60B Datasheet Cover
IXGH32N60B Datasheet Page 2

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IXGH32N60B Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 32A
Power - Max200W
Switching Energy800µJ (off)
Input TypeStandard
Gate Charge125nC
Td (on/off) @ 25°C25ns/100ns
Test Condition480V, 32A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector Pulsed (Icm)

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

1.4mJ (on), 1mJ (off)

Input Type

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Gate Charge

225nC

Td (on/off) @ 25°C

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Test Condition

480V, 50A, 3Ohm, 15V

Reverse Recovery Time (trr)

140ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

ISOPLUS247™

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