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FGA25N120ANTDTU

FGA25N120ANTDTU

For Reference Only

Part Number FGA25N120ANTDTU
PNEDA Part # FGA25N120ANTDTU
Description IGBT 1200V 50A 312W TO3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 20,916
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA25N120ANTDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA25N120ANTDTU
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGA25N120ANTDTU, FGA25N120ANTDTU Datasheet (Total Pages: 9, Size: 1,382.87 KB)
PDFFGA25N120ANTDTU-F109 Datasheet Cover
FGA25N120ANTDTU-F109 Datasheet Page 2 FGA25N120ANTDTU-F109 Datasheet Page 3 FGA25N120ANTDTU-F109 Datasheet Page 4 FGA25N120ANTDTU-F109 Datasheet Page 5 FGA25N120ANTDTU-F109 Datasheet Page 6 FGA25N120ANTDTU-F109 Datasheet Page 7 FGA25N120ANTDTU-F109 Datasheet Page 8 FGA25N120ANTDTU-F109 Datasheet Page 9

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FGA25N120ANTDTU Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic2.65V @ 15V, 50A
Power - Max312W
Switching Energy4.1mJ (on), 960µJ (off)
Input TypeStandard
Gate Charge200nC
Td (on/off) @ 25°C50ns/190ns
Test Condition600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)350ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 75A

Power - Max

938W

Switching Energy

6.4mJ (on), 2.8mJ (off)

Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 75A, 6Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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