FGA25N120ANTDTU-F109 Datasheet
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Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr) 350ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr) 350ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
