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FDN339AN_G

FDN339AN_G

For Reference Only

Part Number FDN339AN_G
PNEDA Part # FDN339AN_G
Description MOSFET N-CH
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDN339AN_G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDN339AN_G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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FDN339AN_G Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs35mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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