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FDMS3660S-F121

FDMS3660S-F121

For Reference Only

Part Number FDMS3660S-F121
PNEDA Part # FDMS3660S-F121
Description MOSFET 2N-CH 30V 13A/30A 8-PQFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMS3660S-F121 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMS3660S-F121
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
FDMS3660S-F121, FDMS3660S-F121 Datasheet (Total Pages: 16, Size: 478.63 KB)
PDFFDMS3660S-F121 Datasheet Cover
FDMS3660S-F121 Datasheet Page 2 FDMS3660S-F121 Datasheet Page 3 FDMS3660S-F121 Datasheet Page 4 FDMS3660S-F121 Datasheet Page 5 FDMS3660S-F121 Datasheet Page 6 FDMS3660S-F121 Datasheet Page 7 FDMS3660S-F121 Datasheet Page 8 FDMS3660S-F121 Datasheet Page 9 FDMS3660S-F121 Datasheet Page 10 FDMS3660S-F121 Datasheet Page 11

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FDMS3660S-F121 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A, 30A
Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1765pF @ 15V
Power - Max1W
Operating Temperature-
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePower56

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