Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7940DP-T1-E3

SI7940DP-T1-E3

For Reference Only

Part Number SI7940DP-T1-E3
PNEDA Part # SI7940DP-T1-E3
Description MOSFET 2N-CH 12V 7.6A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7940DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7940DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7940DP-T1-E3, SI7940DP-T1-E3 Datasheet (Total Pages: 12, Size: 300.19 KB)
PDFSI7940DP-T1-E3 Datasheet Cover
SI7940DP-T1-E3 Datasheet Page 2 SI7940DP-T1-E3 Datasheet Page 3 SI7940DP-T1-E3 Datasheet Page 4 SI7940DP-T1-E3 Datasheet Page 5 SI7940DP-T1-E3 Datasheet Page 6 SI7940DP-T1-E3 Datasheet Page 7 SI7940DP-T1-E3 Datasheet Page 8 SI7940DP-T1-E3 Datasheet Page 9 SI7940DP-T1-E3 Datasheet Page 10 SI7940DP-T1-E3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7940DP-T1-E3 Datasheet
  • where to find SI7940DP-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI7940DP-T1-E3
  • SI7940DP-T1-E3 PDF Datasheet
  • SI7940DP-T1-E3 Stock

  • SI7940DP-T1-E3 Pinout
  • Datasheet SI7940DP-T1-E3
  • SI7940DP-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI7940DP-T1-E3 Price
  • SI7940DP-T1-E3 Distributor

SI7940DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C7.6A
Rds On (Max) @ Id, Vgs17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

The Products You May Be Interested In

IRF7324PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9A

Rds On (Max) @ Id, Vgs

18mOhm @ 9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

2940pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

IRF7389PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

29mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 25V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

BSC0921NDIATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17A, 31A

Rds On (Max) @ Id, Vgs

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1025pF @ 15V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TISON-8

FDMS3620S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

17.5A, 38A

Rds On (Max) @ Id, Vgs

4.7mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1570pF @ 13V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

Power56

TSM4936DCS RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.9A (Ta)

Rds On (Max) @ Id, Vgs

36mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 15V

Power - Max

3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

Recently Sold

AS5163-HTSM

AS5163-HTSM

ams

SENSOR ANGLE 360DEG SMD

BZX84C3V3

BZX84C3V3

ON Semiconductor

DIODE ZENER 3.3V 350MW SOT23-3

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

FPF2123

FPF2123

ON Semiconductor

IC LOAD SWITCH FULL FUNC SOT23-5

DS2401P+T&R

DS2401P+T&R

Maxim Integrated

IC SILICON SERIAL NUMBER 6TSOC

STPS30L60CT

STPS30L60CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

MMSZ5235BT1G

MMSZ5235BT1G

ON Semiconductor

DIODE ZENER 6.8V 500MW SOD123

TC622VAT

TC622VAT

Microchip Technology

IC TEMP SNSR PROG 5V TO220-5

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

ASDMB-48.000MHZ-LC-T

ASDMB-48.000MHZ-LC-T

Abracon

MEMS OSC XO 48.0000MHZ LVCMOS

IXFK90N20

IXFK90N20

IXYS

MOSFET N-CH 200V 90A TO-264AA