SI7940DP-T1-E3
For Reference Only
| Part Number | SI7940DP-T1-E3 |
| PNEDA Part # | SI7940DP-T1-E3 |
| Description | MOSFET 2N-CH 12V 7.6A PPAK SO-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,254 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7940DP-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7940DP-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7940DP-T1-E3 Datasheet
- where to find SI7940DP-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI7940DP-T1-E3
- SI7940DP-T1-E3 PDF Datasheet
- SI7940DP-T1-E3 Stock
- SI7940DP-T1-E3 Pinout
- Datasheet SI7940DP-T1-E3
- SI7940DP-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI7940DP-T1-E3 Price
- SI7940DP-T1-E3 Distributor
SI7940DP-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 11A Rds On (Max) @ Id, Vgs 8.2mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 40V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 12-PowerWDFN Supplier Device Package 12-Power3.3x5 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 17.5A, 38A Rds On (Max) @ Id, Vgs 4.7mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 13V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package Power56 |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 278A Rds On (Max) @ Id, Vgs 5mOhm @ 125A, 10V Vgs(th) (Max) @ Id 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V Power - Max 780W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP6 Supplier Device Package SP6 |
