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FDMC4435BZ-F126

FDMC4435BZ-F126

For Reference Only

Part Number FDMC4435BZ-F126
PNEDA Part # FDMC4435BZ-F126
Description MOSFET P-CH 30V 8.5A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,336
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMC4435BZ-F126 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMC4435BZ-F126
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDMC4435BZ-F126, FDMC4435BZ-F126 Datasheet (Total Pages: 8, Size: 544.81 KB)
PDFFDMC4435BZ-F126 Datasheet Cover
FDMC4435BZ-F126 Datasheet Page 2 FDMC4435BZ-F126 Datasheet Page 3 FDMC4435BZ-F126 Datasheet Page 4 FDMC4435BZ-F126 Datasheet Page 5 FDMC4435BZ-F126 Datasheet Page 6 FDMC4435BZ-F126 Datasheet Page 7 FDMC4435BZ-F126 Datasheet Page 8

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FDMC4435BZ-F126 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2045pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MLP (3.3x3.3)
Package / Case8-PowerWDFN

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