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FDFME2P823ZT

FDFME2P823ZT

For Reference Only

Part Number FDFME2P823ZT
PNEDA Part # FDFME2P823ZT
Description MOSFET P-CH 20V 2.6A 6MICROFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDFME2P823ZT Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDFME2P823ZT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDFME2P823ZT, FDFME2P823ZT Datasheet (Total Pages: 10, Size: 355.31 KB)
PDFFDFME2P823ZT Datasheet Cover
FDFME2P823ZT Datasheet Page 2 FDFME2P823ZT Datasheet Page 3 FDFME2P823ZT Datasheet Page 4 FDFME2P823ZT Datasheet Page 5 FDFME2P823ZT Datasheet Page 6 FDFME2P823ZT Datasheet Page 7 FDFME2P823ZT Datasheet Page 8 FDFME2P823ZT Datasheet Page 9 FDFME2P823ZT Datasheet Page 10

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FDFME2P823ZT Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds405pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.4W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-MicroFET (1.6x1.6)
Package / Case6-UFDFN Exposed Pad

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