Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR3911TRPBF

IRFR3911TRPBF

For Reference Only

Part Number IRFR3911TRPBF
PNEDA Part # IRFR3911TRPBF
Description MOSFET N-CH 100V 14A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,118
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR3911TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR3911TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR3911TRPBF, IRFR3911TRPBF Datasheet (Total Pages: 11, Size: 225.01 KB)
PDFIRFR3911TRPBF Datasheet Cover
IRFR3911TRPBF Datasheet Page 2 IRFR3911TRPBF Datasheet Page 3 IRFR3911TRPBF Datasheet Page 4 IRFR3911TRPBF Datasheet Page 5 IRFR3911TRPBF Datasheet Page 6 IRFR3911TRPBF Datasheet Page 7 IRFR3911TRPBF Datasheet Page 8 IRFR3911TRPBF Datasheet Page 9 IRFR3911TRPBF Datasheet Page 10 IRFR3911TRPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR3911TRPBF Datasheet
  • where to find IRFR3911TRPBF
  • Infineon Technologies

  • Infineon Technologies IRFR3911TRPBF
  • IRFR3911TRPBF PDF Datasheet
  • IRFR3911TRPBF Stock

  • IRFR3911TRPBF Pinout
  • Datasheet IRFR3911TRPBF
  • IRFR3911TRPBF Supplier

  • Infineon Technologies Distributor
  • IRFR3911TRPBF Price
  • IRFR3911TRPBF Distributor

IRFR3911TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDB8896-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2525pF @ 15V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ZXMP7A17GQTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

70V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

635pF @ 40V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

BSS138TA-79

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SI7382DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

5345pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MAX890LESA+T

MAX890LESA+T

Maxim Integrated

IC SW MOSFET PUR PCH HSIDE 8SOIC

IRFHM792TRPBF

IRFHM792TRPBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

HSMS-2820-TR1G

HSMS-2820-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT23-3

BC817-16

BC817-16

Diodes Incorporated

TRANS NPN 45V 0.8A SOT23-3

1SMB5931BT3G

1SMB5931BT3G

ON Semiconductor

DIODE ZENER 18V 550MW SMB

BC81725MTF

BC81725MTF

ON Semiconductor

TRANS NPN 45V 0.8A SOT-23

CAT93C57XI

CAT93C57XI

ON Semiconductor

IC EEPROM 2K SPI 1MHZ 8SOIC

IHLP2525CZERR20M01

IHLP2525CZERR20M01

Vishay Dale

FIXED IND 200NH 24A 3 MOHM SMD

MC9S12C128CFUE

MC9S12C128CFUE

NXP

IC MCU 16BIT 128KB FLASH 80QFP

SMBJ15A-13-F

SMBJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMB

PCF8566T/1,118

PCF8566T/1,118

NXP

IC LCD DVR UNVRSL LOW-MUX 40VSOP