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STH175N4F6-6AG

STH175N4F6-6AG

For Reference Only

Part Number STH175N4F6-6AG
PNEDA Part # STH175N4F6-6AG
Description MOSFET N-CH 40V 120A H2PAK-6
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH175N4F6-6AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH175N4F6-6AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH175N4F6-6AG, STH175N4F6-6AG Datasheet (Total Pages: 18, Size: 589.14 KB)
PDFSTH175N4F6-6AG Datasheet Cover
STH175N4F6-6AG Datasheet Page 2 STH175N4F6-6AG Datasheet Page 3 STH175N4F6-6AG Datasheet Page 4 STH175N4F6-6AG Datasheet Page 5 STH175N4F6-6AG Datasheet Page 6 STH175N4F6-6AG Datasheet Page 7 STH175N4F6-6AG Datasheet Page 8 STH175N4F6-6AG Datasheet Page 9 STH175N4F6-6AG Datasheet Page 10 STH175N4F6-6AG Datasheet Page 11

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STH175N4F6-6AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, STripFET™ F6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7735pF @ 20V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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