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FCP067N65S3

FCP067N65S3

For Reference Only

Part Number FCP067N65S3
PNEDA Part # FCP067N65S3
Description MOSFET N-CH 650V 44A TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP067N65S3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP067N65S3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP067N65S3, FCP067N65S3 Datasheet (Total Pages: 10, Size: 384.06 KB)
PDFFCP067N65S3 Datasheet Cover
FCP067N65S3 Datasheet Page 2 FCP067N65S3 Datasheet Page 3 FCP067N65S3 Datasheet Page 4 FCP067N65S3 Datasheet Page 5 FCP067N65S3 Datasheet Page 6 FCP067N65S3 Datasheet Page 7 FCP067N65S3 Datasheet Page 8 FCP067N65S3 Datasheet Page 9 FCP067N65S3 Datasheet Page 10

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FCP067N65S3 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs67mOhm @ 22A, 10V
Vgs(th) (Max) @ Id4.5V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3090pF @ 400V
FET Feature-
Power Dissipation (Max)312W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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