FCP067N65S3 Datasheet
FCP067N65S3 Datasheet
Total Pages: 10
Size: 384.06 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FCP067N65S3
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Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 67mOhm @ 22A, 10V Vgs(th) (Max) @ Id 4.5V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 400V FET Feature - Power Dissipation (Max) 312W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
