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FCI11N60

FCI11N60

For Reference Only

Part Number FCI11N60
PNEDA Part # FCI11N60
Description MOSFET N-CH 600V 11A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 7 - Apr 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCI11N60 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCI11N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCI11N60, FCI11N60 Datasheet (Total Pages: 8, Size: 899.67 KB)
PDFFCI11N60 Datasheet Cover
FCI11N60 Datasheet Page 2 FCI11N60 Datasheet Page 3 FCI11N60 Datasheet Page 4 FCI11N60 Datasheet Page 5 FCI11N60 Datasheet Page 6 FCI11N60 Datasheet Page 7 FCI11N60 Datasheet Page 8

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FCI11N60 Specifications

ManufacturerON Semiconductor
SeriesSuperFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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