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IRFH7185TRPBF

IRFH7185TRPBF

For Reference Only

Part Number IRFH7185TRPBF
PNEDA Part # IRFH7185TRPBF
Description MOSFET N CH 100V 19A 8QFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH7185TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH7185TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFH7185TRPBF, IRFH7185TRPBF Datasheet (Total Pages: 9, Size: 541.88 KB)
PDFIRFH7185TRPBF Datasheet Cover
IRFH7185TRPBF Datasheet Page 2 IRFH7185TRPBF Datasheet Page 3 IRFH7185TRPBF Datasheet Page 4 IRFH7185TRPBF Datasheet Page 5 IRFH7185TRPBF Datasheet Page 6 IRFH7185TRPBF Datasheet Page 7 IRFH7185TRPBF Datasheet Page 8 IRFH7185TRPBF Datasheet Page 9

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IRFH7185TRPBF Specifications

ManufacturerInfineon Technologies
SeriesFASTIRFET™, HEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.6V @ 150µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2320pF @ 50V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 160W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerTDFN

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