Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMTH10H009SPS-13

DMTH10H009SPS-13

For Reference Only

Part Number DMTH10H009SPS-13
PNEDA Part # DMTH10H009SPS-13
Description MOSFET BVDSS: 61V-100V POWERDI50
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMTH10H009SPS-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMTH10H009SPS-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMTH10H009SPS-13, DMTH10H009SPS-13 Datasheet (Total Pages: 8, Size: 453.12 KB)
PDFDMTH10H009SPS-13 Datasheet Cover
DMTH10H009SPS-13 Datasheet Page 2 DMTH10H009SPS-13 Datasheet Page 3 DMTH10H009SPS-13 Datasheet Page 4 DMTH10H009SPS-13 Datasheet Page 5 DMTH10H009SPS-13 Datasheet Page 6 DMTH10H009SPS-13 Datasheet Page 7 DMTH10H009SPS-13 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMTH10H009SPS-13 Datasheet
  • where to find DMTH10H009SPS-13
  • Diodes Incorporated

  • Diodes Incorporated DMTH10H009SPS-13
  • DMTH10H009SPS-13 PDF Datasheet
  • DMTH10H009SPS-13 Stock

  • DMTH10H009SPS-13 Pinout
  • Datasheet DMTH10H009SPS-13
  • DMTH10H009SPS-13 Supplier

  • Diodes Incorporated Distributor
  • DMTH10H009SPS-13 Price
  • DMTH10H009SPS-13 Distributor

DMTH10H009SPS-13 Specifications

ManufacturerDiodes Incorporated
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

RFP14N05

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

100mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 20V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

BSP299L6327HUSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

AUIRFP4409

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

69mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5168pF @ 50V

FET Feature

-

Power Dissipation (Max)

341W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

STB36NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

83.6nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2722pF @ 100V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQD7N10LTF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

350mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

AD5934YRSZ

AD5934YRSZ

Analog Devices

IC DDS 16.776MHZ 12BIT 16SSOP

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

DG641DY

DG641DY

Vishay Siliconix

IC VIDEO SWITCH SPST 16SOIC

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN

ACPL-C78A-000E

ACPL-C78A-000E

Broadcom

IC OPAMP ISOLATION 1 CIRC 8SSO

IRF3205ZPBF

IRF3205ZPBF

Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

XC3S500E-4VQG100I

XC3S500E-4VQG100I

Xilinx

IC FPGA 66 I/O 100VQFP

IHLP6767GZER8R2M11

IHLP6767GZER8R2M11

Vishay Dale

FIXED IND 8.2UH 21A 8.1 MOHM SMD

KSR223GLFG

KSR223GLFG

C&K

SWITCH TACTILE SPST-NO 0.01A 32V

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH