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DMNH10H028SK3Q-13

DMNH10H028SK3Q-13

For Reference Only

Part Number DMNH10H028SK3Q-13
PNEDA Part # DMNH10H028SK3Q-13
Description MOSFET N-CH 100V 55A TO252
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMNH10H028SK3Q-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMNH10H028SK3Q-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMNH10H028SK3Q-13, DMNH10H028SK3Q-13 Datasheet (Total Pages: 7, Size: 551.76 KB)
PDFDMNH10H028SK3Q-13 Datasheet Cover
DMNH10H028SK3Q-13 Datasheet Page 2 DMNH10H028SK3Q-13 Datasheet Page 3 DMNH10H028SK3Q-13 Datasheet Page 4 DMNH10H028SK3Q-13 Datasheet Page 5 DMNH10H028SK3Q-13 Datasheet Page 6 DMNH10H028SK3Q-13 Datasheet Page 7

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DMNH10H028SK3Q-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2245pF @ 50V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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